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Kyu-Jeong Choi, etal. "Characterstics of ferroelectric YMnO3 thin films for MFISFET by MOCVD"
Integrated Ferroelectric, Vol. 34, (2001) 101-111
Soong-Gil Yoon, etal. "Electrical properties of Pb1-xLax(ZryTi1-y)1-x/4O3 thin films with various Iridium-based top electrodes"
Integrated Ferroelectric, Vol. 33, (2001) 155-164
Kyu-Jeong Choi, etal. "Ferroelectric YMnO3 thin films grown by metal-organic chemcial vapor deposition for metal/
ferroelectric/semiconductor field-effect transistor" Thin Solid Films 384 (2001) 146-150
Eun-Suck Choi. etal. "Improvements in electrical properties of hydrogen-treated SrBi2Ta2O9 capacitors with chemical vapor
depositied Pt top electrode" Applied Physics Letter 78, (2001) 2040-2042
Woong-Chul Shin, etal "Characteristics of Pt/YMnO3/Y2O3/Si structure using a Y2O3 buffer layer grown by pulsed laser deposition"
Journal of Vaccum Science and Technology B 19(1) (2001) 239-243
Soong-Gil Yoon, etal. "Effect of hydrogen on true leakage current characteristics of (Pb,La)(Zr,Ti)O3 thin film capacitors with Pt or Ir based top electrodes" J. Mater. Res., Vol. 16(4) (2001)
Young-Ah Jeon, etal. "Improvement in tunability of (Ba0.5Sr0.5)TiO3 tin films by use of metalorganic chemical vapor deposited (Ba,Sr)RuO3 (BSR) interfacial layers" Applied Physics Letter, 79(7) (2001) 1012-1014
Young-Ah Jeon, etal. "Effect of Ni doping on improvement of the tunability and dielectric loss of Ba0.5Sr0.5TiO3 thin films for microwave tunable devices" Jpn. J. Appl. Phys., 40(11) (2001) 6496-6500
Young-Ah Jeon, etal. "Characterization of (Ba0.5Sr0.5)TiO3 thin films deposited onto metalorganic chemical vapor deposited (Ba,Sr)RuO3 (BSR) seed layers for voltage tunable devices" Integrated Ferroelectrics, (2001) Vol. 39, pp. 281-289
Woong-Chul Shin, etal. "Compositional control of ferroelectric SrBi2Ta2O9 thin films by liquid-delivery metalorganic chemical vapor deposition using single cocktail of Sr[Ta(OEt)5(dmae)]2 and Bi(C6H5)3" J. of the Electrochemical Society, 148(11) (2001) C762-766
Eung-Min Lee, etal. "Diffusion Barrier Characteristics of TaSiN for Pt/TaSiN/poly-Si Electrode Structure of Semiconductor Memory Device" J. of the Electrochemical Society, 148(11) (2001) G611-615
Woong-Chul Shin, etal. "Improvement in ferroelectric properties of SrBi2Ta2O9 thin films with buffer layer by liquid delivery metalorganic chemical vapor deposition" Appl. Phys. Lett., 79(10) (2001) 1519-1521
Woong-Chul Shin, etal. "Effects of Bi2O3 buffer layer on growth and ferroelectric properties of SrBi2Ta2O9 thin films by liquid delivery MOCVD" Integrated Ferroelectrics, (2001) Vol. 36, pp. 295-304
Kyu-Jeong Choi, etal. "Electrical Properties of Hafnium Oxide Gate Dielectrics Deposited by Plasma Enhanced Chemical Vapor Depositon" Integrated Ferroelectrics, (2001) Vol. 38, pp. 191-199
Eun-Suck Choi, etal. "Structural stability of metalorganic chemical vapor deposited (Ba,Sr)RuO3 electrodes for integration of high dielectric memory devices" Integrated Ferroelectrics, (2001) Vol. 37, pp.11-20
Kwi-Young Yun, etal. "Effects of Ar post-annealing on the electrical properties of Pt/YMnO3/p-Si and Pt/Y2O3/p-Si"
Integrated Ferroelectrics, (2001) Vol. 40, pp.163-170
Sang-Shik Park, etal. "Characterization of the CeO2 thin films for insulation layer and Pt/SrBi2Ta2O9/CeO2/Si MFISFET structure"
Integrated Ferroelectrics, (2001) Vol. 40, pp.191-199
Won-Jae Lee, etal. "SrTa2O6 thin films deposited by plasma-enhanced atomic layer depositon"
Jpn. J. Appl. Phys., 40(12) (2001) 1-4
Eun-Suck Choi, etal. "Integration of Pt/Ru bottom electrode structures onto polycrystalline silicon by MOCVD"
Chem. Vap. Deposition 7(6) (2001) 260-264
Sang-Shik Park, etal. "Structure and Electrical Properties of sputter Deposited (Ba1-x,Stx)(Ti1-y,Zry)O3 Thin Films"
Journal of The Electrochemical Society, 148 (8) F155-F158(2001)
Soon-Gil Yoon, etal. "Recovery Characteristics of Hydrogen-Damaged (Pb,La)(Zr,Ti)O3 Capacitors with Pt and IrO2 Top Electrodes"
Journal of The Electrochemical Society, 148 (7) F137-F139(2001)
Kyu-Jeong Choi, etal. "Effect of Hydrogen Treatment on Electrical Properties of Hafnium Oxide for Gate Dielectric Application"
Journal of semiconductor technology and science, Vol.1, No.2, June, 2001
Tae-Suck Suck, etal. "Tunable characteristics of (Ba0.5Sr0.5)TiO3 (BST) capacitors using (Ba,Sr)RuO3 (BSR) interfacial layers onto Pt/Ti/SiO2/Si substrate" Metal and Materials international, 7(6) (2001) 631-635